10N60C DATASHEET PDF

10N60C Datasheet PDF Download – FQP10N60C, 10N60C data sheet. 10N60C Datasheet, 10N60C PDF, 10N60C Data sheet, 10N60C manual, 10N60C pdf, 10N60C, datenblatt, Electronics 10N60C, alldatasheet, free, datasheet. 10N60 Transistor Datasheet, 10N60 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog.

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Transistors are produced using planar stripe, DMOS technology. Drain Applications Pin 3: Nothing contained in this Agreement limits a party from filing a truthful complaint, or the party’s ability to communicate directly to, or otherwise participate in either: Failure by either party hereto to enforce any term datashfet this Agreement shall not be held a waiver of such term nor prevent enforcement of such term thereafter, unless and to the extent expressly set forth in a writing signed by the party charged with such waiver.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in t 1. Your request has been submitted for approval. The term of this agreement is perpetual unless terminated by ON Semiconductor as set forth herein.

However, during the term of this Agreement ON Semiconductor may from time-to-time in its sole discretion provide such Support to Licensee, and provision of same shall not create nor impose any future obligation on ON Semiconductor 10n0c provide any such Support. Upon the effective 10h60c of termination of this Agreement, all licenses granted to Licensee hereunder shall terminate and Licensee shall cease all use, copying, modification and distribution of the Content and shall promptly either destroy or return to ON Semiconductor all copies of the Content in Licensee’s possession or under Licensee’s control.

Licensee 10n60v that the delivery of any Software does not dataxheet a sale and the Software is only licensed. BOM, Gerber, user manual, schematic, test procedures, etc. The parties hereto are for all purposes of this Agreement independent contractors, and neither shall hold itself out datasjeet having any authority to act as an agent or partner of the other party, or in any way bind or commit the other party to any obligations.

(PDF) 10N60C Datasheet download

G E – Variable Speed Drive for washing machines, air conditioners and induc 1. In that event, “Licensee” herein refers to such company. This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Except as expressly permitted in this Agreement, Licensee shall not itself and shall restrict Customers from: Any provision of this Agreement which is held to be invalid or unenforceable by a court in any jurisdiction shall, as to such jurisdiction, be severed from this Agreement and ineffective to the extent of such invalidity or unenforceability without invalidating the remaining portions hereof or affecting the validity or enforceability of such provision in any other jurisdiction.

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These devices are 1.

The TO-3P type provide 1. Source Absolute Maximum Ratings Symbol 1. Such license agreement may be a “break-the-seal” or “click-to-accept” license agreement.

The transistor can be used in various po 1. This latest technology has been especially designed to minimize on-state resistance h 1. Within 30 days after the termination of the Agreement, Licensee shall furnish a statement certifying that all Content and related documentation have been destroyed or returned to ON Semiconductor. Subject to the foregoing, this Agreement shall be binding upon and inure to the benefit of the parties, their successors and assigns.

Please allow business days for 1n060c response. This Agreement may be executed in counterparts, each of which shall be deemed to be an original, and which together shall constitute one and the same agreement.

This Agreement, including the Exhibits attached hereto, constitutes the entire agreement and understanding between the parties hereto regarding the subject matter hereof and supersedes all other agreements, understandings, promises, representations or discussions, written or oral, between the parties dtasheet the subject matter hereof.

Nothing in this Agreement shall be construed as creating a joint venture, agency, partnership, trust or other similar association of any kind between the parties hereto. The transistor can be used in various p 1. Upon reasonable advance written notice, ON Semiconductor shall have the right no more 10n60x than once in any 12 month period during the term of the Agreement, through an independent third party approved by Licensee in writing such approval not to be unreasonably withheldto examine and audit such records and Licensee’s compliance with the terms of Section 2.

Licensee agrees that it has received a copy of the Content, including Software i. It is expressly understood that all Confidential Information transferred hereunder, and all copies, modifications, and derivatives thereof, will remain the property of ON Semiconductor, and the Licensee is authorized to use those materials only in accordance with the terms and conditions of this Agreement.

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All reports, documents, materials and other information collected or prepared during an audit shall be deemed to be the confidential information of Licensee “Licensee Confidential Information”and ON Semiconductor shall protect the confidentiality of all Licensee Confidential Information; provided that, such Licensee Confidential Information shall not be disclosed to any third parties with the sole exception of the independent third party auditor approved by Licensee in writing, and its permitted use shall be restricted to the purposes of the audit rights described in this Section You will receive an email when your request is approved.

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At a minimum such license agreement shall safeguard ON Semiconductor’s ownership rights to the Software.

(Datasheet) 10N60C pdf – FQP10N60C/FQPF10N60C QFET FQP10N60C/FQPF10N60C 6 FQP10N60C (1-page)

Request for this document already exists and is waiting for approval. ON Semiconductor shall own any Modifications to the Software.

10n60d This Agreement may not be amended except in writing signed by an authorized representative of each of the parties hereto. G E – very tight parameter distribution – high ruggedness, temperature stable behavior – low V CEsat – easy parallel switching capability due to positive 1. Licensee agrees that it shall maintain accurate and complete records relating to its activities under Section 2.

Log into MyON to proceed. The transistor can be used in various 1. Except as expressly permitted in this Agreement, Licensee shall not use, modify, copy or distribute the Content or Modifications. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode.

The remedies herein are not exclusive, but rather are cumulative and in addition to all other remedies available to ON Semiconductor.

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Notwithstanding any terms to the contrary in any non-disclosure agreements between the Parties, Licensee shall treat this Agreement and the Content as ON Semiconductor’s “Confidential Information” including: Licensee is and shall be solely responsible and liable for any Modifications and for any Licensee Products, and for testing the Software, Modifications and Licensee Products, and for testing and implementation of the functionality of the Software and Modifications with the Licensee Products.

Licensee agrees that it shall comply fully with all relevant and applicable export laws and regulations of the United States or foreign governments “Export Laws” to ensure that neither the Content, nor any direct product thereof is: G E – very tight param 1. In this Agreement, words importing a singular number only shall include the plural and vice versa, and section numbers and headings are for convenience of reference only and shall not affect the construction or interpretation hereof.

These devices are well suited for high effi-ciency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

The following Sections of this Agreement shall survive the termination or expiration of this Agreement for any reason: If you agree to this Agreement on behalf of a company, you datsheet and warrant that you have authority to bind such company to this Agreement, and your agreement to these terms will be regarded as the agreement of such company.